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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION *With TO-126 package *Complement to type 2SB631/631K *High breakdown voltage VCEO100/120V *High current 1A *Low saturation voltage APPLICATIONS *For low-frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base * Absolute maximum ratings(Ta=25) SYMBOL VCBO PARAMETER 2SD600 Collector-base voltage 2SD600K 2SD600 VCEO VEBO IC ICM PD Tj Tstg Collector-emitter voltage 2SD600K Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 Total power dissipation TC=25 Junction temperature Storage temperature 8 150 -55~150 Open collector Open base 120 5 1 2 1 W V A A Open emitter 120 100 V CONDITIONS VALUE 100 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2SD600 IC=1mA; RBE= 2SD600K 2SD600 IC=10A ;IE=0 2SD600K IE=10A ;IC=0 IC=0.5A ;IB=50mA IC=0.5A ;IB=50mA VCB=50V; IE=0 VEB=4V; IC=0 IC=50mA ; VCE=5V IC=0.5A ; VCE=5V IC=50mA ; VCE=10V f=1MHz ; VCB=10V CONDITIONS 2SD600 2SD600K MIN 100 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 120 100 V 120 5 0.4 1.2 1 1 60 20 130 20 MHz pF 320 V V V A A V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Switching times tf toff tstg Fall time Turn-off time Storage time IC=500mA ; VCE=12V IB1=-IB2=50mA 0.1 0.5 0.7 s s s hFE-1 Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD600 2SD600K Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K 4 |
Price & Availability of 2SD600K
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